Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multi?Gate Architecture

Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for devices has focused on integration into field-effect-transistor (FET) geometries. However, such FET have limited electrostatic tunability presence a single gate. Here, device 9-atom wide armchair (9-AGNRs) multi-gate geometry, consisting an ultra-narrow finger gate two side gates is reported. High-resolution electron-beam lithography (EBL) used defining as narrow 12 nm combine them with electrodes contacting GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior rich Coulomb diamond patterns, suggesting that GNRs form QDs connected both in series parallel. Moreover, it shown additional enable differential tuning nanojunction, providing first step toward control GNR-based multi-dot systems.